Planar Geometry Ge‐on‐ Si Single‐Photon Avalanche Diode Detectors for the Short‐Wave Infrared
15:00 - 15:20
Gerald Buller Germanium layers have been used to extend the operational wavelength of silicon-based single-photon avalanche diode (SPAD) detectors. We present a novel planar geometry device which has shown a significant improvements in comparison to all previous mesa geometry Ge-on-Si SPAD detectors. The single-photon detection efficiency is as high a 38% in these prototype devices, with significant improvements demonstrated in dark count rate and jitter in comparison with previously published Ge-on-Si SPADs. An afterpulsing comparison with alternative InGaAs/InP SPADs will be presented, as well as a study of the spectral response. We will discuss future device iterations for further performance enhancements.
