Current‐assisted single photon avalanche diode (CASPAD) in 350 nm CMOS
10:10 - 10:30
Gobinath Jegannathan, Hans Ingelberts and Maarten Kuijk A novel type of SPAD, fabricated in 350 nm CMOS technology, is presented consisting of a small 1-fF avalanche diode in its center and surrounded by a large collection volume for photo-generated minority carriers. A current-assisted drift field guides each photo-generated electron in the collection volume towards the center diode for the purpose of triggering a diode breakdown.
