InAsP quantum dot nanowires for telecom single photon emission
10:00 - 10:20
Sofiane Haffouz, Philip J. Poole, Katharina D. Zeuner, Dan Dalacu, Jeongwan Jin, Lambert Giner, Xiaohua Wu, Khaled Mnaymneh, Jean Lapointe, Val Zwiller and Robin L. Williams We report on the site-selected growth of single InAsP quantum dots embedded within InP photonic nanowires with unprecedented tuning range from 880 nm to 1550 nm by modifying the dot growth conditions. As an example, high purity single photon source at 1310 nm with low multiphoton emission probability is demonstrated. Alternative approach to achieve light emission in the telecom band where we grow the single InAsxP1-x quantum dot in an InAsyP1-y quantum rod, all embedded in the InP nanowire waveguide will be presented. With this dot-in-a-rod configuration, the 1310 nm-emitter emission intensity was increased from 275,000 cps to 613,000 cps.
