Room temperature operation of InP/InGaAs single photon avalanche diode
14:40 - 15:00
Chan-Yong Park, Soohyun Baek, Jung-Hyun Kim, Bora Jeon, Seung-Chul Yang, Chulwoo Park and Seok-Beom Cho Room temperature operation of single photon avalanche diode is very important in the points that it provides low cost solution and small size of module. We fabricated a high performance SPAD having small active volume. Using conventional gating technology, the dark count probability(DCP)/gate was measured to be 2E-6 at -40C and 3E-5 at room temperature for 30% photon detection efficiency(PDE), respectively. We will present various other performances in the workshop.